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Enhanced Magnetron Cathode Arc: The cathodic arc technique is to deposit the film material by ionizing the target into a ionic state under low voltage and high current under vacuum conditions. The enhanced magnetron cathode arc utilizes the combined action of electromagnetic fields to effectively control the arc on the surface of the target, so that the ionization rate of the material is higher and the film performance is more excellent.

Filtered Cathodic Arc: Filtered Cathodic Arc (FCA) is equipped with a highly efficient electromagnetic filtration system that filters out macroscopic particles and ion clusters in the plasma generated by the ion source. After magnetic filtration, the ionization rate of the deposited particles is 100%. And the large particles can be filtered out, so the prepared film is very dense and smooth, has good corrosion resistance, and has strong binding force with the body.

Magnetron sputtering: in a vacuum environment, by the interaction of voltage and magnetic field, the target is bombarded with ionized inert gas ions, causing the target to be ejected in the form of ions, atoms or molecules and deposited on the base member. A film is formed thereon. Both conductor and non-conductor materials can be sputtered as targets depending on the ionization source used.

Ion beam DLC: The hydrocarbon gas is ionized into a plasma in the ion source. Under the action of the electromagnetic field, the ion source releases carbon ions. The ion beam energy is controlled by adjusting the voltage applied to the plasma. The hydrocarbon ion beam is directed onto the substrate and the deposition rate is proportional to the ion current density. The ion beam source of the star arc coating uses a high voltage, so the ion energy is larger, so that the film and the substrate have good bonding force; the ion current is larger, so that the deposition speed of the DLC film is faster. The main advantage of ion beam technology is that it can deposit ultra-thin and multi-layer structures with process control accuracy of several angstroms and minimize defects caused by particle contamination during the process.